Wide Temperature Operating Range of High Isolation

Mitsubishi Electric has developed new High Voltage Insulated Gate Bipolar Transistor (HV-IGBT) modules called the ‘R-Series’ with a high isolation package, which can be used with a wide operating temperature range from -50°C up to 150°C. The newly developed chip set achieves stable operation and high SOA capability over a wide temperature range. In addition the new package design is optimized for high isolation. The new HV-IGBT R-series has been developed to meet the requirements of high reliability applications for cold latitudes and to increase the inverter output power without increasing the equipment size. Kenji Hatori, Shuichi Kitamura, Shigeru Hasegawa, Shinichi Iura, Power Device Works, Mitsubishi Electric Corporation, Japan; Masuo Koga, Fukuryo Semicon Engineering Corporation, Fukuoka, Japan; Eugen Stumpf, Mitsubishi Electric Europe B.V., Germany